, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BCY70 bcy71/bcy72 general purpose applications description the BCY70, bcy71 and bcy72 are silicon planar epitaxial pnp transistors in jedec to-18 metaj case. ok. to-18 internal schematic diagram pnp absolute maximum ratings symbol vcbo vceo vebo icm ptol tsto, t, parameter collector-base voltage (ie = 0) collector-emitter voltage (le = 0) emitter-base voltage (ic = 0} collector peak current total power dissipation at tam6 s 25 c storage and junction temperature value BCY70 -50 -40 bcy71 -45 -45 bcy72 -25 -25 -5 -200 350 - 65 to 200 unit v v v ma mw :c pulsed : pulse duration = 300 us. duty cyde = 1 %. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
ihbhmaldata rth j-c83b rth j-amb thermal resistance junction-case max thermal resistance junction-ambient max 150 500 c/w c/w electrical characteristics (tamb = 25 c unless otherwise specified) symbol ices iebo vce (sat)* vbe(sat)* hfe* hfa fr cebo ccbo parameter collector cutoff current (vbe=0) emitter cutoff current oo-o) collector-emitter saturation voltage base-emitter saturation voltage dc current gain small signal current gain (for bcy71 only) transition frequency emitter-base capacitance collector-base capacitance test conditions for BCY70 vce =-20 v vce = - 50 v for bcy71 vcb = - 20 v vcb = - 45 v for bcy72 vcb = - 20 v vcb = - 25 v veb =-5 v lc =- 10 ma ib =- 1 ma lc =- 50 ma ib =-5 ma lc =- 10 ma ib =- 1 ma for BCY70 and bcy71 only lc =-50 ma ib =- 5 ma for BCY70 lc=-0,1 ma vce =- 1 v lc =-1 ma vce =-1 v lc =-10ma vce =-1 v lc = - 50 ma vce = - 1 v for bcy71 lc =-0.01 ma vce =-1 v lc=-0.1 ma vce =-1 v lc?-1 ma vce =-1 v lc =- 10ma vce =-1 v lc =-50ma vce =- 1 v for bcy72 lc=-1 ma vce ? 1 v lc =- 10ma vce =- 1 v lc =-1 ma vce =-10 v f = 1 khz lc =-0,1 ma vce =-20 v f = 10.7 mhz for bcy71 lc--10ma vce =- 20v f = 100 mhz for BCY70 for BCY70 and bcy72 lc=0 veb =-1 v f - 1 mhz ie=0 vcb=-10v f ? 1 mhz mln. - 0.6 40 45 50 15 80 90 100 15 40 50 100 15 250 200 typ. 60 - max. - 10 -500 -100 - 10 -100 - 10 -10 -0.25 -0.5 - 0.9 -1.2 600 400 8 6 unit na na na ha na ha ha v v v v mhz mhz mhz pf pf * pulsed : pulse duration n 300 us, duty cycle = 1 %.
electrical characteristics (continued) symbol nf hi. h,e hoa td tr u tf ton tod parameter noise figure input impedance (for bcy71 only) reverse voltage ratio (for bcy71 only) output admittance (for bcy71 only) delay time (for BCY70 and bcy72 only) rise time (for BCY70 and bcy72 only) storage time (for BCY70 and bcy72 only) fall time (for BCY70 and bcy72 only) turn-on time (for BCY70 and bcy72 only) turn-off time (for BCY70 and bcy72 only) teat conditions lc =-0.1 ma vce =-5 v rg =2ko f = 10 to 10 000 hz for BCY70 and bcy72 for bcy71 lc =-1 ma vce =-10 v f = 1 khz lc=-1 ma vce =-10 v f = 1khz lc?-1 ma vce =-10 v f = 1 khz lc=-10ma vee=3v ibi =-1 ma lc=-10ma vee=3v ib1 =-1 ma lc=-10ma vee=3v |b1 =? |b2 =? 1 ma lc=-10ma vee=3v |b1 =- |b2 =-1 ma lc=-10ma vee=3v ibi =-1 ma lc=-10ma veg=3v ibi =- lea =-1 rna win. 2 10 typ. 23 25 270 50 48 320 max. 6 2 12 20x10-" 60 35 35 350 80 65 420 unit db db kn us ns ns ns ns ns ns * pulsed : pulse duration = 300 us. duty cycle ? 1 %. test circuit test circuit for switching times. 3.0v -20v vbb=7.0v -20v
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